Langevin noise sources for the Boltzmann transport equations with the relaxation-time approximation in nondegenerate semiconductors

H. S. Min; Doyeol Ahn

doi:10.1063/1.335943

Langevin noise sources for the Boltzmann transport equations with the relaxation-time approximation in nondegenerate semiconductors

H. S. Min, Doyeol Ahn

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An analytic and useful form of the noise sources due to intraband scattering for the Boltzmann transport equations in the relaxation-time approximation is obtained for nondegenerate semiconductors. It is shown that the derived noise source gives the Nyquist's theorem.

Original language	English
Pages (from-to)	2262-2265
Number of pages	4
Journal	Journal of Applied Physics
Volume	58
Issue number	6
DOIs	https://doi.org/10.1063/1.335943
State	Published - 1985

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title = "Langevin noise sources for the Boltzmann transport equations with the relaxation-time approximation in nondegenerate semiconductors",

abstract = "An analytic and useful form of the noise sources due to intraband scattering for the Boltzmann transport equations in the relaxation-time approximation is obtained for nondegenerate semiconductors. It is shown that the derived noise source gives the Nyquist's theorem.",

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AU - Ahn, Doyeol

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AB - An analytic and useful form of the noise sources due to intraband scattering for the Boltzmann transport equations in the relaxation-time approximation is obtained for nondegenerate semiconductors. It is shown that the derived noise source gives the Nyquist's theorem.

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JO - Journal of Applied Physics

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Langevin noise sources for the Boltzmann transport equations with the relaxation-time approximation in nondegenerate semiconductors

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