Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD

Sung Hyun Lee; Wan Shick Hong; Jong Mm Kim; Hyuck Lim; Kuyng Bae Park; Chul Lae Cho; Kyung Eun Lee; Do Young Kim; Ji Sim Jung; Jang Yeon Kwon; Takashi Noguch

Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD

Sung Hyun Lee, Wan Shick Hong, Jong Mm Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguch

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (150°C). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as 70 mJ/cm², and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

Original language	English
Pages (from-to)	1116-1118
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	2
State	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 19 Jul 2005 → 23 Jul 2005

Cite this

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title = "Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD",

abstract = "We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (150°C). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as 70 mJ/cm2, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.",

author = "Lee, {Sung Hyun} and Hong, {Wan Shick} and Kim, {Jong Mm} and Hyuck Lim and Park, {Kuyng Bae} and Cho, {Chul Lae} and Lee, {Kyung Eun} and Kim, {Do Young} and Jung, {Ji Sim} and Kwon, {Jang Yeon} and Takashi Noguch",

year = "2006",

language = "English",

volume = "2",

pages = "1116--1118",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD

AU - Lee, Sung Hyun

AU - Hong, Wan Shick

AU - Kim, Jong Mm

AU - Lim, Hyuck

AU - Park, Kuyng Bae

AU - Cho, Chul Lae

AU - Lee, Kyung Eun

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguch, Takashi

PY - 2006

Y1 - 2006

N2 - We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (150°C). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as 70 mJ/cm2, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

AB - We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (150°C). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as 70 mJ/cm2, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

UR - http://www.scopus.com/inward/record.url?scp=33847341302&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847341302

SN - 1738-7558

VL - 2

SP - 1116

EP - 1118

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD

Abstract

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