Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

Seoung Hwan Park; Doyeol Ahn

doi:10.1016/j.spmi.2018.03.066

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ultraviolet light emission characteristics of lattice-matched B_xAl_yGa_1−x−y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Original language	English
Pages (from-to)	413-417
Number of pages	5
Journal	Superlattices and Microstructures
Volume	117
DOIs	https://doi.org/10.1016/j.spmi.2018.03.066
State	Published - May 2018

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title = "Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices",

abstract = "Ultraviolet light emission characteristics of lattice-matched BxAlyGa1−x−y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = may,

doi = "10.1016/j.spmi.2018.03.066",

language = "English",

volume = "117",

pages = "413--417",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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T1 - Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2018/5

Y1 - 2018/5

N2 - Ultraviolet light emission characteristics of lattice-matched BxAlyGa1−x−y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

AB - Ultraviolet light emission characteristics of lattice-matched BxAlyGa1−x−y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

UR - http://www.scopus.com/inward/record.url?scp=85044931766&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2018.03.066

DO - 10.1016/j.spmi.2018.03.066

M3 - Article

AN - SCOPUS:85044931766

SN - 0749-6036

VL - 117

SP - 413

EP - 417

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

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