Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices

Nicholas Dale, M. Iqbal Bakti Utama, Dongkyu Lee, Nicolas Leconte, Sihan Zhao, Kyunghoon Lee, Takashi Taniguchi, Kenji Watanabe, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Roland J. Koch, Jeil Jung, Feng Wang, Alessandra Lanzara

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.

Original languageEnglish
Pages (from-to)6799-6806
Number of pages8
JournalNano Letters
Volume23
Issue number15
DOIs
StatePublished - 9 Aug 2023

Keywords

  • ARPES
  • band gap.
  • electron−electron interaction
  • moiré heterostructures
  • symmetry-breaking
  • twisted bilayer graphene

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