Light emission enhancement in blue InGaAlN/InGaN quantum well structures

Seoung Hwan Park; Yong Tae Moon; Dae Seob Han; Joong Seo Park; Myeong Seok Oh; Doyeol Ahn

doi:10.1063/1.3657141

Light emission enhancement in blue InGaAlN/InGaN quantum well structures

Seoung Hwan Park, Yong Tae Moon, Dae Seob Han, Joong Seo Park, Myeong Seok Oh, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the AlInGaN materials was determined through a comparison with experimental results. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive on In composition in the InGaN barrier. For example, the spontaneous emission coefficient for Al_0.08In_0.22Ga _0.67N/InxGa_1-xN QW structures shows a maximum at In composition of 0.13 in the barrier and gradually decreases with increasing In composition. This is attributed to the fact that the quasi-Fermi-level separation linearly decreases with increasing In composition in the barrier due to the decrease in the conduction and valence band offsets. The AlInGaN/InGaN system with zero internal field is found to have smaller emission peak than the AlInGaN/InGaN system with nonzero internal field due to smaller band offsets.

Original language	English
Article number	181101
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3657141
State	Published - 31 Oct 2011

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title = "Light emission enhancement in blue InGaAlN/InGaN quantum well structures",

abstract = "Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the AlInGaN materials was determined through a comparison with experimental results. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive on In composition in the InGaN barrier. For example, the spontaneous emission coefficient for Al0.08In0.22Ga 0.67N/InxGa1-xN QW structures shows a maximum at In composition of 0.13 in the barrier and gradually decreases with increasing In composition. This is attributed to the fact that the quasi-Fermi-level separation linearly decreases with increasing In composition in the barrier due to the decrease in the conduction and valence band offsets. The AlInGaN/InGaN system with zero internal field is found to have smaller emission peak than the AlInGaN/InGaN system with nonzero internal field due to smaller band offsets.",

author = "Park, {Seoung Hwan} and Moon, {Yong Tae} and Han, {Dae Seob} and {Seo Park}, Joong and Oh, {Myeong Seok} and Doyeol Ahn",

year = "2011",

month = oct,

day = "31",

doi = "10.1063/1.3657141",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Light emission enhancement in blue InGaAlN/InGaN quantum well structures

AU - Park, Seoung Hwan

AU - Moon, Yong Tae

AU - Han, Dae Seob

AU - Seo Park, Joong

AU - Oh, Myeong Seok

AU - Ahn, Doyeol

PY - 2011/10/31

Y1 - 2011/10/31

N2 - Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the AlInGaN materials was determined through a comparison with experimental results. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive on In composition in the InGaN barrier. For example, the spontaneous emission coefficient for Al0.08In0.22Ga 0.67N/InxGa1-xN QW structures shows a maximum at In composition of 0.13 in the barrier and gradually decreases with increasing In composition. This is attributed to the fact that the quasi-Fermi-level separation linearly decreases with increasing In composition in the barrier due to the decrease in the conduction and valence band offsets. The AlInGaN/InGaN system with zero internal field is found to have smaller emission peak than the AlInGaN/InGaN system with nonzero internal field due to smaller band offsets.

AB - Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the AlInGaN materials was determined through a comparison with experimental results. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive on In composition in the InGaN barrier. For example, the spontaneous emission coefficient for Al0.08In0.22Ga 0.67N/InxGa1-xN QW structures shows a maximum at In composition of 0.13 in the barrier and gradually decreases with increasing In composition. This is attributed to the fact that the quasi-Fermi-level separation linearly decreases with increasing In composition in the barrier due to the decrease in the conduction and valence band offsets. The AlInGaN/InGaN system with zero internal field is found to have smaller emission peak than the AlInGaN/InGaN system with nonzero internal field due to smaller band offsets.

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U2 - 10.1063/1.3657141

DO - 10.1063/1.3657141

M3 - Article

AN - SCOPUS:80855140794

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181101

ER -

Light emission enhancement in blue InGaAlN/InGaN quantum well structures

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