Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Dillon Wong, Yang Wang, Jeil Jung, Sergio Pezzini, Ashley M. Dasilva, Hsin Zon Tsai, Han Sae Jung, Ramin Khajeh, Youngkyou Kim, Juwon Lee, Salman Kahn, Sajjad Tollabimazraehno, Haider Rasool, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Shaffique Adam, Allan H. Macdonald, Michael F. Crommie

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Abstract

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here, we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data are explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly nonperturbative character of tBLG interlayer coupling in the small twist-angle regime.

Original languageEnglish
Article number155409
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number15
DOIs
StatePublished - 7 Oct 2015

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