Abstract
Ferroelectric Bi325La075Ti3O,2 (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. BLT thin films prepared on PtJTiO2 coated Si02/Si(100) were investigated by Raman scattering spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy. Raman spectra reveal the growth route of phase-formation of the BLT films. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are trongly dependent on growth temperature. Depth-profiling of the electronic states of Bi, Ti, and La atoms shows the oxidation during the growth.
Original language | English |
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Pages (from-to) | 1246-1249 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 9 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2009 |
Keywords
- Atomic force microscopy
- Blt thin films
- Raman spectroscopy
- X-ray photoelectron spectroscopy