Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Y. S. Kim; J. Kim; S. J. Moon; W. S. Choi; Y. J. Chang; J. G. Yoon; J. Yu; J. S. Chung; T. W. Noh

doi:10.1063/1.3139767

Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Y. S. Kim, J. Kim, S. J. Moon, W. S. Choi, Y. J. Chang, J. G. Yoon, J. Yu, J. S. Chung, T. W. Noh

Department of Physics

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92 Scopus citations

Abstract

Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim, Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO.

Original language	English
Article number	202906
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3139767
State	Published - 2009

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title = "Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films",

abstract = "Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim, Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO.",

author = "Kim, {Y. S.} and J. Kim and Moon, {S. J.} and Choi, {W. S.} and Chang, {Y. J.} and Yoon, {J. G.} and J. Yu and Chung, {J. S.} and Noh, {T. W.}",

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journal = "Applied Physics Letters",

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AU - Kim, Y. S.

AU - Kim, J.

AU - Moon, S. J.

AU - Choi, W. S.

AU - Chang, Y. J.

AU - Yoon, J. G.

AU - Yu, J.

AU - Chung, J. S.

AU - Noh, T. W.

PY - 2009

Y1 - 2009

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AB - Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim, Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO.

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JO - Applied Physics Letters

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Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

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