Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

Yoon Kim, Jang Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Se Hwan Park, Dong Hua Lee, Doo Hyun Kim, Gil Sung Lee, Won Bo Sim, Jong Duk Lee, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using ATLAS simulation. This device structure is promising for multi-storage and multi-level operation.

Original languageEnglish
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
StatePublished - 2008
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: 15 Jun 200816 Jun 2008

Publication series

NameIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

ConferenceIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/TerritoryUnited States
CityHonolulu, HI
Period15/06/0816/06/08

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