Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

Jaewook Yoo; Seohyeon Park; Hongseung Lee; Seongbin Lim; Hyeonjun Song; Minah Park; Soyeon Kim; Jo Hak Jeong; Jung Woo Bong; Keun Heo; Kiyoung Lee; Tae Wan Kim; Peide D. Ye; Hagyoul Bae

doi:10.1021/acsami.4c14876

Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

Jaewook Yoo
, Seohyeon Park
, Hongseung Lee
, Seongbin Lim
, Hyeonjun Song
, Minah Park
, Soyeon Kim
, Jo Hak Jeong
, Jung Woo Bong
, Keun Heo
, Kiyoung Lee
, Tae Wan Kim
, Peide D. Ye
, Hagyoul Bae

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu₂O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (R_ch) contributes significantly to mobility degradation in the TFTs, with channel thickness (t_ch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in t_ch, contributed simultaneously. Increased R_ch contributed more significantly to the 1/f noise than to the contact resistance (R_C), as evidenced by the R_C configuration of the measurements, which also revealed that R_C depends upon t_ch. This study demonstrates that t_ch is a major noise source in Cu₂O TFTs and presents guidelines for the development of Cu₂O TFTs and potential high-mobility p-type oxide semiconductors.

Original language	English
Pages (from-to)	3538-3547
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	17
Issue number	2
DOIs	https://doi.org/10.1021/acsami.4c14876
State	Published - 15 Jan 2025

Keywords

Arrhenius plot
Hooge mobility fluctuation
channel resistance
copper(I) oxide semiconductor
low-frequency noise
scattering
transmission line method (TLM)

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10.1021/acsami.4c14876

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title = "Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors",

abstract = "In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (Rch) contributes significantly to mobility degradation in the TFTs, with channel thickness (tch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in tch, contributed simultaneously. Increased Rch contributed more significantly to the 1/f noise than to the contact resistance (RC), as evidenced by the RC configuration of the measurements, which also revealed that RC depends upon tch. This study demonstrates that tch is a major noise source in Cu2O TFTs and presents guidelines for the development of Cu2O TFTs and potential high-mobility p-type oxide semiconductors.",

keywords = "Arrhenius plot, Hooge mobility fluctuation, channel resistance, copper(I) oxide semiconductor, low-frequency noise, scattering, transmission line method (TLM)",

author = "Jaewook Yoo and Seohyeon Park and Hongseung Lee and Seongbin Lim and Hyeonjun Song and Minah Park and Soyeon Kim and Jeong, \{Jo Hak\} and Bong, \{Jung Woo\} and Keun Heo and Kiyoung Lee and Kim, \{Tae Wan\} and Ye, \{Peide D.\} and Hagyoul Bae",

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T1 - Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

AU - Yoo, Jaewook

AU - Park, Seohyeon

AU - Lee, Hongseung

AU - Lim, Seongbin

AU - Song, Hyeonjun

AU - Park, Minah

AU - Kim, Soyeon

AU - Jeong, Jo Hak

AU - Bong, Jung Woo

AU - Heo, Keun

AU - Lee, Kiyoung

AU - Kim, Tae Wan

AU - Ye, Peide D.

AU - Bae, Hagyoul

PY - 2025/1/15

Y1 - 2025/1/15

N2 - In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (Rch) contributes significantly to mobility degradation in the TFTs, with channel thickness (tch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in tch, contributed simultaneously. Increased Rch contributed more significantly to the 1/f noise than to the contact resistance (RC), as evidenced by the RC configuration of the measurements, which also revealed that RC depends upon tch. This study demonstrates that tch is a major noise source in Cu2O TFTs and presents guidelines for the development of Cu2O TFTs and potential high-mobility p-type oxide semiconductors.

AB - In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (Rch) contributes significantly to mobility degradation in the TFTs, with channel thickness (tch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in tch, contributed simultaneously. Increased Rch contributed more significantly to the 1/f noise than to the contact resistance (RC), as evidenced by the RC configuration of the measurements, which also revealed that RC depends upon tch. This study demonstrates that tch is a major noise source in Cu2O TFTs and presents guidelines for the development of Cu2O TFTs and potential high-mobility p-type oxide semiconductors.

KW - Arrhenius plot

KW - Hooge mobility fluctuation

KW - channel resistance

KW - copper(I) oxide semiconductor

KW - low-frequency noise

KW - scattering

KW - transmission line method (TLM)

UR - https://www.scopus.com/pages/publications/85216036455

U2 - 10.1021/acsami.4c14876

DO - 10.1021/acsami.4c14876

M3 - Article

C2 - 39740115

AN - SCOPUS:85216036455

SN - 1944-8244

VL - 17

SP - 3538

EP - 3547

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 2

ER -

Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

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Keywords

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