Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding

Jung Hoon Lee; Hyun Woo Kim; Il Han Park; Seongjae Cho; Gil Seong Lee; Doo Hyun Kim; Jang Gn Yun; Yoon Kim; Jong Duk Lee; Byung Gook Park; Euijoon Yoon

doi:10.1109/NMDC.2006.4388941

Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding

Jung Hoon Lee, Hyun Woo Kim, Il Han Park, Seongjae Cho, Gil Seong Lee, Doo Hyun Kim, Jang Gn Yun, Yoon Kim, Jong Duk Lee, Byung Gook Park, Euijoon Yoon

School of Electrical and Computer Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In the CMOS technology, silicon rounding technique is often an essential part of fabrication. There have been some studies about hydrogen annealing process in a silicon fin. But the previous studies have been done in relatively large silicon fins (200 nm - 1 μm). In this study, effect of hydrogen annealing in a nanoscale fin (30 nm - 100 nm) is investigated. There is significant difference between large width fin and small width fin. Especially, in the smaller fin, not only silicon self-diffusion but also silicon etch phenomenon become important.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	638-639
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388941
State	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 22 Oct 2006 → 25 Oct 2006

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	22/10/06 → 25/10/06

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10.1109/NMDC.2006.4388941

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Lee, J. H., Kim, H. W., Park, I. H., Cho, S., Lee, G. S., Kim, D. H., Yun, J. G., Kim, Y., Lee, J. D., Park, B. G., & Yoon, E. (2006). Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 638-639). Article 4388941 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388941

@inproceedings{1d025d577a3943abbb09d73902496403,

title = "Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding",

abstract = "In the CMOS technology, silicon rounding technique is often an essential part of fabrication. There have been some studies about hydrogen annealing process in a silicon fin. But the previous studies have been done in relatively large silicon fins (200 nm - 1 μm). In this study, effect of hydrogen annealing in a nanoscale fin (30 nm - 100 nm) is investigated. There is significant difference between large width fin and small width fin. Especially, in the smaller fin, not only silicon self-diffusion but also silicon etch phenomenon become important.",

author = "Lee, {Jung Hoon} and Kim, {Hyun Woo} and Park, {Il Han} and Seongjae Cho and Lee, {Gil Seong} and Kim, {Doo Hyun} and Yun, {Jang Gn} and Yoon Kim and Lee, {Jong Duk} and Park, {Byung Gook} and Euijoon Yoon",

year = "2006",

doi = "10.1109/NMDC.2006.4388941",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "638--639",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Lee, JH, Kim, HW, Park, IH, Cho, S, Lee, GS, Kim, DH, Yun, JG, Kim, Y, Lee, JD, Park, BG & Yoon, E 2006, Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388941, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 638-639, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 22/10/06. https://doi.org/10.1109/NMDC.2006.4388941

Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding. / Lee, Jung Hoon; Kim, Hyun Woo; Park, Il Han et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 638-639 4388941 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding

AU - Lee, Jung Hoon

AU - Kim, Hyun Woo

AU - Park, Il Han

AU - Cho, Seongjae

AU - Lee, Gil Seong

AU - Kim, Doo Hyun

AU - Yun, Jang Gn

AU - Kim, Yoon

AU - Lee, Jong Duk

AU - Park, Byung Gook

AU - Yoon, Euijoon

PY - 2006

Y1 - 2006

N2 - In the CMOS technology, silicon rounding technique is often an essential part of fabrication. There have been some studies about hydrogen annealing process in a silicon fin. But the previous studies have been done in relatively large silicon fins (200 nm - 1 μm). In this study, effect of hydrogen annealing in a nanoscale fin (30 nm - 100 nm) is investigated. There is significant difference between large width fin and small width fin. Especially, in the smaller fin, not only silicon self-diffusion but also silicon etch phenomenon become important.

AB - In the CMOS technology, silicon rounding technique is often an essential part of fabrication. There have been some studies about hydrogen annealing process in a silicon fin. But the previous studies have been done in relatively large silicon fins (200 nm - 1 μm). In this study, effect of hydrogen annealing in a nanoscale fin (30 nm - 100 nm) is investigated. There is significant difference between large width fin and small width fin. Especially, in the smaller fin, not only silicon self-diffusion but also silicon etch phenomenon become important.

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U2 - 10.1109/NMDC.2006.4388941

DO - 10.1109/NMDC.2006.4388941

M3 - Conference contribution

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SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 638

EP - 639

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Low-pressure, low-temperature hydrogen annealing for nanoscale silicon fin rounding

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