@inproceedings{e75473222200498aa74aad7c0f669cd4,
title = "Low temperature characterization of PMOS-type gate-all-around silicon nanowire FETs as single-hole-transistors",
abstract = "We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.",
keywords = "Gate all around, Silicon nanowire field effect transistor, Temperature dependence",
author = "Hong, {B. H.} and Hwang, {S. W.} and Lee, {Y. Y.} and Son, {M. H.} and D. Ahn and Cho, {K. H.} and Yeo, {K. H.} and Kim, {D. W.} and Jin, {G. Y.} and D. Park",
year = "2011",
doi = "10.1063/1.3666368",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "291--292",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}