Low temperature characterization of PMOS-type gate-all-around silicon nanowire FETs as single-hole-transistors

B. H. Hong, S. W. Hwang, Y. Y. Lee, M. H. Son, D. Ahn, K. H. Cho, K. H. Yeo, D. W. Kim, G. Y. Jin, D. Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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