Low temperature characterization of PMOS-type gate-all-around silicon nanowire FETs as single-hole-transistors
- B. H. Hong
- , S. W. Hwang
- , Y. Y. Lee
- , M. H. Son
- , D. Ahn
- , K. H. Cho
- , K. H. Yeo
- , D. W. Kim
- , G. Y. Jin
- , D. Park
- Korea University
- University of Seoul
- Samsung
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review