Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Won Park, Jun Hyeong Park, Jun Su Eun, Jinuk Lee, Jeong Hyeon Na, Sin Hyung Lee, Jaewon Jang, In Man Kang, Do Kyung Kim, Jin Hyuk Bae

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

Original languageEnglish
Article number2231
JournalNanomaterials
Volume13
Issue number15
DOIs
StatePublished - Aug 2023

Keywords

  • enhancement mode
  • low processing temperature
  • low-pressure annealing
  • metal-oxide semiconductor
  • solution process
  • thin-film transistors

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