Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Won Park; Jun Hyeong Park; Jun Su Eun; Jinuk Lee; Jeong Hyeon Na; Sin Hyung Lee; Jaewon Jang; In Man Kang; Do Kyung Kim; Jin Hyuk Bae

doi:10.3390/nano13152231

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Won Park, Jun Hyeong Park, Jun Su Eun, Jinuk Lee, Jeong Hyeon Na, Sin Hyung Lee, Jaewon Jang, In Man Kang, Do Kyung Kim, Jin Hyuk Bae

School of Advanced Fusion Studies

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InO_x) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InO_x even at a low temperature. As a result, the fabricated LPA InO_x TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 10⁹. Furthermore, the LPA InO_x TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

Original language	English
Article number	2231
Journal	Nanomaterials
Volume	13
Issue number	15
DOIs	https://doi.org/10.3390/nano13152231
State	Published - Aug 2023

Keywords

enhancement mode
low processing temperature
low-pressure annealing
metal-oxide semiconductor
solution process
thin-film transistors

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10.3390/nano13152231

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@article{437694b85b89431aab53dde4ea978854,

title = "Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing",

abstract = "The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.",

keywords = "enhancement mode, low processing temperature, low-pressure annealing, metal-oxide semiconductor, solution process, thin-film transistors",

author = "Won Park and Park, {Jun Hyeong} and Eun, {Jun Su} and Jinuk Lee and Na, {Jeong Hyeon} and Lee, {Sin Hyung} and Jaewon Jang and Kang, {In Man} and Kim, {Do Kyung} and Bae, {Jin Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = aug,

doi = "10.3390/nano13152231",

language = "English",

volume = "13",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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T1 - Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

AU - Park, Won

AU - Park, Jun Hyeong

AU - Eun, Jun Su

AU - Lee, Jinuk

AU - Na, Jeong Hyeon

AU - Lee, Sin Hyung

AU - Jang, Jaewon

AU - Kang, In Man

AU - Kim, Do Kyung

AU - Bae, Jin Hyuk

PY - 2023/8

Y1 - 2023/8

N2 - The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

AB - The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

KW - enhancement mode

KW - low processing temperature

KW - low-pressure annealing

KW - metal-oxide semiconductor

KW - solution process

KW - thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85167697150&partnerID=8YFLogxK

U2 - 10.3390/nano13152231

DO - 10.3390/nano13152231

M3 - Article

AN - SCOPUS:85167697150

SN - 2079-4991

VL - 13

JO - Nanomaterials

JF - Nanomaterials

IS - 15

M1 - 2231

ER -

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

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Keywords

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