TY - JOUR
T1 - Low-temperature-processible, transparent, and air-operable n-channel fluorinated phenylethylated naphthalenetetracarboxylic diimìde semiconductors applied to flexible transistors
AU - Jung, Byung Jun
AU - Sun, Jia
AU - Lee, Taegweon
AU - Sarjeant, Amy
AU - Katz, Howard E.
PY - 2009/1/13
Y1 - 2009/1/13
N2 - New N,N'-disubstituted-l,4,5,8-naphthalene tetracarboxylic acid diimides (NTCDI) with fluorinated phenylethyl groups were synthesized. In particular, N,N'-bis(2-(pentafluorophenyl)ethyl)-1,4,5,8-naphthalene tetracarboxylic acid diimide (5FPE-NTCDI) showed high electron mobility, more than 0.1 cm 2/(V s) in air, even though the film was deposited at room temperature. The correlation of the crystallinity, morphology, and mobility with the substrate temperature during deposition (T sub) was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The films of 5FPE-NTCDI exhibited a "thin film phase", mixed phase, and crystal bulk phase as T sub was increased. The mixed phase on an octadecyltrimethoxysilane (OTS)-treated substrate also has high electron mobility due to well connected long fiber-shaped grains. The high mobility at low T sub has enabled fabrication of flexible transistors on the clear plastic substrate poly(ethylene terephthalate) (PET). The highest mobility for a flexible, transparent transistor was 0.23 cm 2/(V s), obtained with low hysteresis.
AB - New N,N'-disubstituted-l,4,5,8-naphthalene tetracarboxylic acid diimides (NTCDI) with fluorinated phenylethyl groups were synthesized. In particular, N,N'-bis(2-(pentafluorophenyl)ethyl)-1,4,5,8-naphthalene tetracarboxylic acid diimide (5FPE-NTCDI) showed high electron mobility, more than 0.1 cm 2/(V s) in air, even though the film was deposited at room temperature. The correlation of the crystallinity, morphology, and mobility with the substrate temperature during deposition (T sub) was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The films of 5FPE-NTCDI exhibited a "thin film phase", mixed phase, and crystal bulk phase as T sub was increased. The mixed phase on an octadecyltrimethoxysilane (OTS)-treated substrate also has high electron mobility due to well connected long fiber-shaped grains. The high mobility at low T sub has enabled fabrication of flexible transistors on the clear plastic substrate poly(ethylene terephthalate) (PET). The highest mobility for a flexible, transparent transistor was 0.23 cm 2/(V s), obtained with low hysteresis.
UR - http://www.scopus.com/inward/record.url?scp=61849158160&partnerID=8YFLogxK
U2 - 10.1021/cm802281k
DO - 10.1021/cm802281k
M3 - Article
AN - SCOPUS:61849158160
SN - 0897-4756
VL - 21
SP - 94
EP - 101
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 1
ER -