Magneto-transport in a silicon-on-insulator nanowire transistor

Keun Hwi Cho, Young Chai Jung, Seung Hun Son, Sung Woo Hwang, Doyeol Ahn, Byung Gook Park, Jonathan P. Bird

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report magneto-transport through a silicon-on-insulator nanowire transistor. The transport data showed Coulomb oscillations at low temperatures and a transition between positive and negative magneto-conductance. At magnetic field (B) larger than the transition, the current decreases exponentially with an increase of B. Such B-dependence of the conductance, together with the observed Coulomb oscillations, is consistent with the interpretation that our nanowire transistor has a 1D-0D transport path originating from random potential fluctuations.

Original languageEnglish
Pages (from-to)S526-S529
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 3
StatePublished - Nov 2005


  • 1D-0D
  • Magneto-conductance
  • Single-electron tunneling


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