Magneto-transport in a silicon-on-insulator nanowire transistor

We report magneto-transport through a silicon-on-insulator nanowire transistor. The transport data showed Coulomb oscillations at low temperatures and a transition between positive and negative magneto-conductance. At magnetic field (B) larger than the transition, the current decreases exponentially with an increase of B. Such B-dependence of the conductance, together with the observed Coulomb oscillations, is consistent with the interpretation that our nanowire transistor has a 1D-0D transport path originating from random potential fluctuations.