Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy

Seung Jae Oh; Chul Kang; Inhee Maeng; Joo Hiuk Son; Nam Ki Cho; Jin Dong Song; Won Jun Choi; Woon Jor Cho; Jung Il Lee

doi:10.1063/1.2716859

Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy

Seung Jae Oh, Chul Kang, Inhee Maeng, Joo Hiuk Son, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Woon Jor Cho, Jung Il Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs.

Original language	English
Article number	131906
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2716859
State	Published - 2007

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title = "Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy",

abstract = "The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs.",

author = "Oh, {Seung Jae} and Chul Kang and Inhee Maeng and Son, {Joo Hiuk} and Cho, {Nam Ki} and Song, {Jin Dong} and Choi, {Won Jun} and Cho, {Woon Jor} and Lee, {Jung Il}",

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T1 - Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy

AU - Oh, Seung Jae

AU - Kang, Chul

AU - Maeng, Inhee

AU - Son, Joo Hiuk

AU - Cho, Nam Ki

AU - Song, Jin Dong

AU - Choi, Won Jun

AU - Cho, Woon Jor

AU - Lee, Jung Il

PY - 2007

Y1 - 2007

N2 - The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs.

AB - The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs.

UR - http://www.scopus.com/inward/record.url?scp=34047167954&partnerID=8YFLogxK

U2 - 10.1063/1.2716859

DO - 10.1063/1.2716859

M3 - Article

AN - SCOPUS:34047167954

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131906

ER -

Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy

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