Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

Gil Sung Lee; Il Han Park; Seongjae Cho; Jang Gn Yun; Jung Hoon Lee; Dong Hua Li; Doo Hyun Kim; Yoon Kim; Se Hwan Park; Won Bo Sim; Jong Duk Lee; Byung Gook Park

doi:10.1109/SNW.2008.5418386

Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

Gil Sung Lee, Il Han Park, Seongjae Cho, Jang Gn Yun, Jung Hoon Lee, Dong Hua Li, Doo Hyun Kim, Yoon Kim, Se Hwan Park, Won Bo Sim, Jong Duk Lee, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418386
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 15 Jun 2008 → 16 Jun 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	15/06/08 → 16/06/08

Access to Document

10.1109/SNW.2008.5418386

Cite this

Lee, G. S., Park, I. H., Cho, S., Yun, J. G., Lee, J. H., Li, D. H., Kim, D. H., Kim, Y., Park, S. H., Sim, W. B., Lee, J. D., & Park, B. G. (2008). Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 Article 5418386 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418386

@inproceedings{21f8166e3da04e418f43215df6b28c60,

title = "Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure",

abstract = "We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.",

author = "Lee, {Gil Sung} and Park, {Il Han} and Seongjae Cho and Yun, {Jang Gn} and Lee, {Jung Hoon} and Li, {Dong Hua} and Kim, {Doo Hyun} and Yoon Kim and Park, {Se Hwan} and Sim, {Won Bo} and Lee, {Jong Duk} and Park, {Byung Gook}",

year = "2008",

doi = "10.1109/SNW.2008.5418386",

language = "English",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

}

Lee, GS, Park, IH, Cho, S, Yun, JG, Lee, JH, Li, DH, Kim, DH, Kim, Y, Park, SH, Sim, WB, Lee, JD & Park, BG 2008, Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418386, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 15/06/08. https://doi.org/10.1109/SNW.2008.5418386

Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure. / Lee, Gil Sung; Park, Il Han; Cho, Seongjae et al.
IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418386 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

AU - Lee, Gil Sung

AU - Park, Il Han

AU - Cho, Seongjae

AU - Yun, Jang Gn

AU - Lee, Jung Hoon

AU - Li, Dong Hua

AU - Kim, Doo Hyun

AU - Kim, Yoon

AU - Park, Se Hwan

AU - Sim, Won Bo

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2008

Y1 - 2008

N2 - We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.

AB - We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.

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U2 - 10.1109/SNW.2008.5418386

DO - 10.1109/SNW.2008.5418386

M3 - Conference contribution

AN - SCOPUS:77949996690

SN - 9781424420711

T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

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