Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Eunkyeom Kim; Kyoungmin Kim; Daeho Son; Jeongho Kim; Sunghwan Won; Wan Shick Hong; Junghyun Sok; Kyoungwan Park

doi:10.1016/j.mee.2008.09.041

Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Eunkyeom Kim, Kyoungmin Kim, Daeho Son, Jeongho Kim, Sunghwan Won, Wan Shick Hong, Junghyun Sok, Kyoungwan Park

University of Seoul

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The digital gas-feeding method was used in this study, with Si₂H₆ as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 10¹¹ cm^-2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/-20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.

Original language	English
Pages (from-to)	2370-2373
Number of pages	4
Journal	Microelectronic Engineering
Volume	85
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2008.09.041
State	Published - Dec 2008

Keywords

Digital gas-feeding
Flash memory
Nanocrystal floating-gate memory
Nonvolatile memory
Si nanocluster

Access to Document

10.1016/j.mee.2008.09.041

Cite this

@article{3f540b057ee84c86bf581074c47c92f3,

title = "Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system",

abstract = "The digital gas-feeding method was used in this study, with Si2H6 as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 1011 cm-2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/-20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.",

keywords = "Digital gas-feeding, Flash memory, Nanocrystal floating-gate memory, Nonvolatile memory, Si nanocluster",

author = "Eunkyeom Kim and Kyoungmin Kim and Daeho Son and Jeongho Kim and Sunghwan Won and Hong, {Wan Shick} and Junghyun Sok and Kyoungwan Park",

year = "2008",

month = dec,

doi = "10.1016/j.mee.2008.09.041",

language = "English",

volume = "85",

pages = "2370--2373",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "12",

}

TY - JOUR

T1 - Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

AU - Kim, Eunkyeom

AU - Kim, Kyoungmin

AU - Son, Daeho

AU - Kim, Jeongho

AU - Won, Sunghwan

AU - Hong, Wan Shick

AU - Sok, Junghyun

AU - Park, Kyoungwan

PY - 2008/12

Y1 - 2008/12

N2 - The digital gas-feeding method was used in this study, with Si2H6 as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 1011 cm-2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/-20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.

AB - The digital gas-feeding method was used in this study, with Si2H6 as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 1011 cm-2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/-20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.

KW - Digital gas-feeding

KW - Flash memory

KW - Nanocrystal floating-gate memory

KW - Nonvolatile memory

KW - Si nanocluster

UR - http://www.scopus.com/inward/record.url?scp=56949099412&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2008.09.041

DO - 10.1016/j.mee.2008.09.041

M3 - Article

AN - SCOPUS:56949099412

SN - 0167-9317

VL - 85

SP - 2370

EP - 2373

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 12

ER -

Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this