Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFS-FET) for 1T-type FRAM based on Polyvinylidene Fluoride (PVDF) thin film

The metal-ferroelectric-semiconductor field effect transistor (MFSFET) was fabricated using polyvinylidene fluoride (PVDF) thin film as a ferroelectric layer. PVDF thin films of 4 and 6 wt% were spin-coated on Si(100) wafers. Ferroelectric hysteretic curves inducing a counterclockwise loop, which means that the deposited PVDF films were crystallized with ferroelectric β phase, was exhibited in the drain current-gate voltage (ID-VG) characteristics of MFSFET. The memory window widths of the MFSFET were more than 1.6 V. The MFSFET that operates with the PVDF thin film used as a gate dielectric material is shown in the drain current-drain voltage (ID-VD) characteristics. The MFSFET using PVDF as ferroelectric layer has promising potential for use in low-voltage operable one transistor (1T) type ferroelectric random access memories (FeRAM) using organic material.