Microgap gas chamber studies

H. S. Cho; W. S. Hong; N. Palaio; J. Kadyk; K. B. Luk; V. Perez-Mendez

doi:10.1109/23.506668

Microgap gas chamber studies

H. S. Cho, W. S. Hong, N. Palaio, J. Kadyk, K. B. Luk, V. Perez-Mendez

Department of Materials Science and Engineering

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11 Scopus citations

Abstract

Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO₂ insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.

Original language	English
Pages (from-to)	1227-1231
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	43
Issue number	3 PART 2
DOIs	https://doi.org/10.1109/23.506668
State	Published - 1996

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AB - Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.

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Microgap gas chamber studies

Abstract

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