Abstract
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.
Original language | English |
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Pages | 148-152 |
Number of pages | 5 |
State | Published - 1995 |
Event | Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) - San Francisco, CA, USA Duration: 21 Oct 1995 → 28 Oct 1995 |
Conference
Conference | Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) |
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City | San Francisco, CA, USA |
Period | 21/10/95 → 28/10/95 |