Abstract
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.
| Original language | English |
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| Pages | 148-152 |
| Number of pages | 5 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) - San Francisco, CA, USA Duration: 21 Oct 1995 → 28 Oct 1995 |
Conference
| Conference | Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) |
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| City | San Francisco, CA, USA |
| Period | 21/10/95 → 28/10/95 |