Microscopic surface structures and macroscopic thin-film morphology

Atsushi Oshiyama, Byung Doek Yu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We review our first-principle total-energy electronic-structure calculations which clarify roles of energetics and kinetics in atomic reactions at the initial stage of semiconductor epitaxial growth. It is emphasized that microscopic atomic structures at the initial stages crucially affect the morphology of the resulting overlayers. The mechanisms of the {311} facet appearance, the surfactant-mediated epitaxial growth of Ge, and the substitutional adsorption of group V atoms, on the Si(100) surface are discussed.

Original languageEnglish
Pages (from-to)364-374
Number of pages11
JournalThin Solid Films
Issue number2
StatePublished - 15 Jan 1996


  • Epitaxy
  • Semiconductors
  • Surface morphology
  • Surface structure


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