Abstract
Insulator-metal phase transitions were induced in V O2 Al2 O3 films by applying a voltage pulse to a micrometric junction. We investigated the mechanism involved both spatially and temporally using midinfrared microspectroscopy. At the phase transition, we found that multilevel current switching occurred, a behavior typical of numerous compounds showing electric-pulse-induced resistance switching. We were able to demonstrate that in the case of our V O2 film, the multilevel switching was directly related to the formation of local conducting paths, which originated from sample inhomogeneity.
Original language | English |
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Article number | 133509 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 13 |
DOIs | |
State | Published - 2007 |