Abstract
Insulator-metal phase transitions were induced in V O2 Al2 O3 films by applying a voltage pulse to a micrometric junction. We investigated the mechanism involved both spatially and temporally using midinfrared microspectroscopy. At the phase transition, we found that multilevel current switching occurred, a behavior typical of numerous compounds showing electric-pulse-induced resistance switching. We were able to demonstrate that in the case of our V O2 film, the multilevel switching was directly related to the formation of local conducting paths, which originated from sample inhomogeneity.
| Original language | English |
|---|---|
| Article number | 133509 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 13 |
| DOIs | |
| State | Published - 2007 |