Microwave design and characterization of a cryogenic dip probe for time-domain measurements of nanodevices

The characterization and microwave (MW) design of a cryogenic dip probe, which was used for the time-domain measurements of nanodevices, were discussed. The microwave dip probe delivered ultrashort electrical pulses to semiconductor nanodevices at cryogenic temperatures (T). The cable modeling was used to achieve the de-embedding of the MW sample mounting stage (SMS) characteristic from the measurements of dip probe, which was dipped in liquid He. The dip probe was use to analyze the transmission of short electrical pulses from the pulse generator at 300 K to the MW SMS at 4.2 K, with minimal degradation.