Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Kyunghwan Lee; Myounggon Kang; Yuchul Hwang; Hyungcheol Shin

doi:10.1088/0268-1242/30/12/125006

Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Kyunghwan Lee, Myounggon Kang, Yuchul Hwang, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Misunderstanding apparent activation energy (E _aa) can cause serious error in lifetime predictions. In this paper, the E _aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap (N _it) recovery mechanism has the greatest impact on the charge loss. However, the values of E _aa and E _a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E _aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E _aa and derive a mathematical formula for E _aa as a function of each E _a(mechanism) in NAND flash memory. Using the proposed E _aa equation, the accurate lifetime for the device is estimated.

Original language	English
Article number	125006
Journal	Semiconductor Science and Technology
Volume	30
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/30/12/125006
State	Published - 30 Oct 2015

Keywords

activation energy (E)
apparent activation energy (E)
Arrhenius model
failure mechanism
lifetime estimation
NAND flash memory

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10.1088/0268-1242/30/12/125006

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title = "Modeling of apparent activation energy and lifetime estimation in NAND flash memory",

abstract = "Misunderstanding apparent activation energy (E aa) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap (N it) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E aa and derive a mathematical formula for E aa as a function of each E a(mechanism) in NAND flash memory. Using the proposed E aa equation, the accurate lifetime for the device is estimated.",

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AU - Lee, Kyunghwan

AU - Kang, Myounggon

AU - Hwang, Yuchul

AU - Shin, Hyungcheol

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N2 - Misunderstanding apparent activation energy (E aa) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap (N it) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E aa and derive a mathematical formula for E aa as a function of each E a(mechanism) in NAND flash memory. Using the proposed E aa equation, the accurate lifetime for the device is estimated.

AB - Misunderstanding apparent activation energy (E aa) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap (N it) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E aa and derive a mathematical formula for E aa as a function of each E a(mechanism) in NAND flash memory. Using the proposed E aa equation, the accurate lifetime for the device is estimated.

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KW - failure mechanism

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Modeling of apparent activation energy and lifetime estimation in NAND flash memory

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