@inproceedings{7310076037ca4ad1b1258248ea52a573,
title = "Modeling of Channel Current in Sub-threshold Region for Poly-Si based Macaroni Structure in 3D NAND Flash Memories",
abstract = "In this paper, sub-threshold region I-V model for poly-Si based macaroni structure in 3D NAND Flash memories is presented. The model is based on analytical I-V solution for macaroni structure which was previously developed for single crystal-Si channel. Starting from the existing model, the characteristics of polysilicon, such as sub-threshold slope (S.S.) and mobility degradation and drain induced barrier lowering (DIBL), were added. Moreover, we considered shift in I-V curve due to different distribution of traps for each cell.",
keywords = "macaroni structure, mobility and DIBL, polysilicon characteristics, S.S.",
author = "Juhyun Kim and Ilho Myeong and Minsoo Kim and Sungbak Kim and Myounggon Kang and Jongwook Jeon and Hyungcheol Shin",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731334",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "200--202",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "United States",
}