Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

Changbeom Woo; Shinkeun Kim; Jaeyeol Park; Dongiun Lee; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

doi:10.1109/EDTM.2019.8731083

Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Dongiun Lee, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels (E_t) of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E_a) of lateral migration mechanism was extracted by adopting the Arrhenius relationship.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	261-263
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731083
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

activation energy (Ea))
lateral migration
retention operation
stretched exponential function

Access to Document

10.1109/EDTM.2019.8731083

Cite this

Woo, C., Kim, S., Park, J., Lee, D., Kang, M., Jeon, J., & Shin, H. (2019). Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 261-263). Article 8731083 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731083

Woo, Changbeom ; Kim, Shinkeun ; Park, Jaeyeol et al. / Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 261-263 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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title = "Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories",

abstract = "In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels (Et) of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (Ea) of lateral migration mechanism was extracted by adopting the Arrhenius relationship.",

keywords = "activation energy (Ea)), lateral migration, retention operation, stretched exponential function",

author = "Changbeom Woo and Shinkeun Kim and Jaeyeol Park and Dongiun Lee and Myounggon Kang and Jongwook Jeon and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731083",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "261--263",

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address = "United States",

}

Woo, C, Kim, S, Park, J, Lee, D, Kang, M, Jeon, J & Shin, H 2019, Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731083, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 261-263, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731083

Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories. / Woo, Changbeom; Kim, Shinkeun; Park, Jaeyeol et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 261-263 8731083 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kang, Myounggon

AU - Jeon, Jongwook

AU - Shin, Hyungcheol

PY - 2019/3

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N2 - In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels (Et) of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (Ea) of lateral migration mechanism was extracted by adopting the Arrhenius relationship.

AB - In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels (Et) of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (Ea) of lateral migration mechanism was extracted by adopting the Arrhenius relationship.

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M3 - Conference contribution

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BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

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ER -

Woo C, Kim S, Park J, Lee D, Kang M, Jeon J et al. Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 261-263. 8731083. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731083

Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

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