Modeling of pentacehe MIS capacitors with admittance measurements and the effects of dispersive charge transport

Keum Dong Jung; Cheon An Lee; Dong Wook Park; Byung Gook Park; Hyungcheol Shin; Jong Duk Lee

Modeling of pentacehe MIS capacitors with admittance measurements and the effects of dispersive charge transport

Keum Dong Jung, Cheon An Lee, Dong Wook Park, Byung Gook Park, Hyungcheol Shin, Jong Duk Lee

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of C_i, C_d, C _b, and R_b are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

Original language	English
Pages (from-to)	67-69
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

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title = "Modeling of pentacehe MIS capacitors with admittance measurements and the effects of dispersive charge transport",

abstract = "Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of Ci, Cd, C b, and Rb are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.",

author = "Jung, {Keum Dong} and Lee, {Cheon An} and Park, {Dong Wook} and Park, {Byung Gook} and Hyungcheol Shin and Lee, {Jong Duk}",

year = "2006",

language = "English",

volume = "2006",

pages = "67--69",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

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TY - JOUR

T1 - Modeling of pentacehe MIS capacitors with admittance measurements and the effects of dispersive charge transport

AU - Jung, Keum Dong

AU - Lee, Cheon An

AU - Park, Dong Wook

AU - Park, Byung Gook

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

PY - 2006

Y1 - 2006

N2 - Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of Ci, Cd, C b, and Rb are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

AB - Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of Ci, Cd, C b, and Rb are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

UR - http://www.scopus.com/inward/record.url?scp=33846182622&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846182622

SN - 1738-7558

VL - 2006

SP - 67

EP - 69

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

Modeling of pentacehe MIS capacitors with admittance measurements and the effects of dispersive charge transport

Abstract

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