Models of Threshold Voltage and Subthreshold Slope for Macaroni Channel MOSFET

Quan Nguyen-Gia, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Models of threshold voltage and subthreshold slope (SS) for macaroni channel MOSFET are built for the first time based on the potential model in our previous work. These models clearly illustrate the variations of threshold voltage and subthreshold slope caused by short-channel-effects when changing gate length, silicon thickness, oxide thickness, channel doping concentration, and drain-to-source bias. The good agreements between simulations and models verified the validity of those models.

Original languageEnglish
Article number9096337
Pages (from-to)973-976
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number7
DOIs
StatePublished - Jul 2020

Keywords

  • flash memory
  • macaroni structure
  • short-channel-effect
  • subthreshold slope
  • Threshold voltage

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