Multi-level analog resistive switching characteristics in tri-layer hfo2/al2o3/hfo2 based memristor on ito electrode

Chandreswar Mahata; Myounggon Kang; Sungjun Kim

doi:10.3390/nano10102069

Multi-level analog resistive switching characteristics in tri-layer hfo₂/al₂o₃/hfo₂ based memristor on ito electrode

Chandreswar Mahata, Myounggon Kang, Sungjun Kim

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Atomic layer deposited (ALD) HfO₂ /Al₂O₃ /HfO₂ tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO₂ /Al₂O₃ interface where tri-valent Al incorporates with HfO₂ and produces HfAlO. The uniformity in bipolar resistive switching with I_on/I_off ratio (>10) and excellent endurance up to >10³ cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

Original language	English
Article number	2069
Pages (from-to)	1-12
Number of pages	12
Journal	Nanomaterials
Volume	10
Issue number	10
DOIs	https://doi.org/10.3390/nano10102069
State	Published - Oct 2020

Keywords

HfO/AlO/HfO tri-layer RRAM
Multilevel conductance
Synaptic properties
Transparent electrode

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10.3390/nano10102069

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title = "Multi-level analog resistive switching characteristics in tri-layer hfo2/al2o3/hfo2 based memristor on ito electrode",

abstract = "Atomic layer deposited (ALD) HfO2 /Al2O3 /HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2 /Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.",

keywords = "HfO/AlO/HfO tri-layer RRAM, Multilevel conductance, Synaptic properties, Transparent electrode",

author = "Chandreswar Mahata and Myounggon Kang and Sungjun Kim",

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AU - Kim, Sungjun

PY - 2020/10

Y1 - 2020/10

N2 - Atomic layer deposited (ALD) HfO2 /Al2O3 /HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2 /Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

AB - Atomic layer deposited (ALD) HfO2 /Al2O3 /HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2 /Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

KW - HfO/AlO/HfO tri-layer RRAM

KW - Multilevel conductance

KW - Synaptic properties

KW - Transparent electrode

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Multi-level analog resistive switching characteristics in tri-layer hfo₂/al₂o₃/hfo₂ based memristor on ito electrode

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