TY - JOUR
T1 - N-type organic thin film transistors with high operational stability
AU - Roh, Jeongkyun
AU - Kang, Chan Mo
AU - Shin, Hyeonwoo
AU - Kwak, Jeonghun
AU - Jung, Byung Jun
AU - Lee, Changhee
PY - 2014/6
Y1 - 2014/6
N2 - n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm2/Vs with hydrophobic polymers.
AB - n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm2/Vs with hydrophobic polymers.
KW - n-type OTFT
KW - operational stability
KW - organic thin film transistors
UR - http://www.scopus.com/inward/record.url?scp=84905018354&partnerID=8YFLogxK
U2 - 10.1002/j.2168-0159.2014.tb00265.x
DO - 10.1002/j.2168-0159.2014.tb00265.x
M3 - Article
AN - SCOPUS:84905018354
SN - 0097-966X
VL - 45
SP - 1021
EP - 1023
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - 1
ER -