N-type organic thin film transistors with high operational stability

Jeongkyun Roh; Chan Mo Kang; Hyeonwoo Shin; Jeonghun Kwak; Byung Jun Jung; Changhee Lee

doi:10.1002/j.2168-0159.2014.tb00265.x

N-type organic thin film transistors with high operational stability

Jeongkyun Roh
, Chan Mo Kang
, Hyeonwoo Shin
, Jeonghun Kwak
, Byung Jun Jung
, Changhee Lee

Department of Materials Science and Engineering

Seoul National University
Dong-A University

Research output: Contribution to journal › Article › peer-review

Abstract

n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm²/Vs with hydrophobic polymers.

Original language	English
Pages (from-to)	1021-1023
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00265.x
State	Published - Jun 2014

Keywords

n-type OTFT
operational stability
organic thin film transistors

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10.1002/j.2168-0159.2014.tb00265.x

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title = "N-type organic thin film transistors with high operational stability",

abstract = "n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm2/Vs with hydrophobic polymers.",

keywords = "n-type OTFT, operational stability, organic thin film transistors",

author = "Jeongkyun Roh and Kang, \{Chan Mo\} and Hyeonwoo Shin and Jeonghun Kwak and Jung, \{Byung Jun\} and Changhee Lee",

year = "2014",

month = jun,

doi = "10.1002/j.2168-0159.2014.tb00265.x",

language = "English",

volume = "45",

pages = "1021--1023",

journal = "Digest of Technical Papers - SID International Symposium",

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T1 - N-type organic thin film transistors with high operational stability

AU - Roh, Jeongkyun

AU - Kang, Chan Mo

AU - Shin, Hyeonwoo

AU - Kwak, Jeonghun

AU - Jung, Byung Jun

AU - Lee, Changhee

PY - 2014/6

Y1 - 2014/6

N2 - n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm2/Vs with hydrophobic polymers.

AB - n-type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OTFTs was improved by engineering organic semiconductor-gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14-0.15 cm2/Vs with hydrophobic polymers.

KW - n-type OTFT

KW - operational stability

KW - organic thin film transistors

UR - https://www.scopus.com/pages/publications/84905018354

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M3 - Article

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SN - 0097-966X

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SP - 1021

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

N-type organic thin film transistors with high operational stability

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Keywords

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