Nano Mold Lithography for 40-nm Patterns

C. M. Park, B. H. Cho, C. K. Hyon, S. W. Hwang, D. Ahn, E. K. Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We present nano mold lithography (NML) which is adequate for high throughput sub-100-nm wafer-level lithography. The details of the house-made press machine and the recipes of the NML are explained. A silicon mold with a minimum feature size of 40 nm has been successfully imprinted on PMMA layers. Reproducible pattern transfer has been routinely achieved with a feature size of 100 nm and a maximum area of 600 μm × 200 μm. Imprinting of metal molds on PMMA layers has also been demonstrated, which opens up the possibility of using metal lift-off patterns as mold patterns.

Original languageEnglish
Pages (from-to)157-159
Number of pages3
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - Jul 2001


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