Abstract
Nanometer scale mechanical processing of semi-insulating GaAs surface was performed using a cantilever oscillating atomic force microscope. Oscillating probe tips induce bond breaking of the GaAs surface and generate nano-meter size patterns. The size of the pattern is shown to be fully controlled by the amplitude and the frequency of the external modulation voltage to the piezo-scanner.
| Original language | English |
|---|---|
| Pages (from-to) | 7257-7259 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 12 B |
| DOIs | |
| State | Published - 1999 |
Keywords
- AFM
- Cantilever oscillation
- Nano-structure
- Scanning probe lithography
- Voltage modulation
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