Abstract
A resistless nano-structure patterning technique by using tip-oscillation of an atomic force microscope (AFM) has been investigated systematically. The AFM cantilever exerting approximately 1 μN forces on the GaAs surface and oscillating at the natural frequency of the feedback circuit induces the bond breaking of the GaAs atoms from the surface. We applied this technique to the manipulation of InGaAs quantum dots formed on GaAs substrate. InGaAs quantum dots have successfully been removed from the original location. The process is simple to perform, and well suited for nano-device fabrication.
Original language | English |
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Pages (from-to) | S987-S990 |
Journal | Journal of the Korean Physical Society |
Volume | 35 |
Issue number | SUPPL. 4 |
State | Published - 1999 |