Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

T. W. Kim; T. J. Garrod; K. Kim; J. J. Lee; S. D. Lalumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss; T. F. Kuech; Rao Tatavarti; L. J. Mawst

doi:10.1063/1.3693160

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. Lalumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, L. J. Mawst

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V _oc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.

Original language	English
Article number	121120
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3693160
State	Published - 19 Mar 2012

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title = "Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy",

abstract = "Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V oc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.",

author = "Kim, {T. W.} and Garrod, {T. J.} and K. Kim and Lee, {J. J.} and Lalumondiere, {S. D.} and Y. Sin and Lotshaw, {W. T.} and Moss, {S. C.} and Kuech, {T. F.} and Rao Tatavarti and Mawst, {L. J.}",

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doi = "10.1063/1.3693160",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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T1 - Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

AU - Kim, T. W.

AU - Garrod, T. J.

AU - Kim, K.

AU - Lee, J. J.

AU - Lalumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

AU - Kuech, T. F.

AU - Tatavarti, Rao

AU - Mawst, L. J.

PY - 2012/3/19

Y1 - 2012/3/19

N2 - Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V oc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.

AB - Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V oc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.

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U2 - 10.1063/1.3693160

DO - 10.1063/1.3693160

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121120

ER -

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

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