Natural Local Self-Boosting Effect in 3D NAND Flash Memory

Myounggon Kang, Yoon Kim

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate. Despite the application of the global self-boosted program-inhibit scheme, the selected wordline cell is localized automatically during the program pulse application. This phenomenon is analyzed using a computer-aided design simulation, and an analytical model of boosted potential of an inhibited channel in 3D NAND flash memory is proposed.

Original languageEnglish
Article number8003304
Pages (from-to)1236-1239
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - Sep 2017

Keywords

  • 3D NAND flash memory
  • natural local self-booting (NLSB)
  • program inhibit string
  • self-boosted inhibit scheme

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