Nearly flat bands in twisted triple bilayer graphene

Jiseon Shin, Bheema Lingam Chittari, Yunsu Jang, Hongki Min, Jeil Jung

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6 Scopus citations


We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling ω, twist angle θ, interlayer potential difference Δ, and top-bottom bilayers sliding vector τ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap opening through a finite interlayer potential difference Δ allows the flattening of bands in t3BG down to ∼20 meV for twist angles θ≲2∘ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite Δ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth U/W≳1 ratios in the θ and Δ parameter space. We also present the expected K-valley Chern numbers for the lowest-energy nearly flat bands.

Original languageEnglish
Article number245124
JournalPhysical Review B
Issue number24
StatePublished - 15 Jun 2022


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