Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS₂ Field-Effect Transistors

Ultrathin ReS₂-based field-effect transistors (FETs) are promising candidates for use in extreme radiation environments, such as nuclear facilities and space missions, due to their layered structure and unique electrical properties. In this study, we investigate the degradation in electrical performance of ReS₂ FETs subjected to 2.2 MeV neutron irradiation. As neutron fluence increases, the on-current and field-effect mobility decrease significantly, from 84% to 31% and from 88% to 37% of their initial values, respectively, while both subthreshold swing (SS) and hysteresis exhibit notable increases. These degradations are attributed to the formation of oxides and the generation of interface traps induced by irradiation. Additionally, threshold voltage shifts are observed, which are attributed to the varying dominance of oxide-trap- and interface-trap-related mechanisms. These findings enhance the understanding of fast neutron irradiation effects on ReS₂-based nanoelectronic devices and support their reliable operation in radiation-rich environments.