New a-Si:H photo-detectors for long-term charge storage

H. Lee, G. Cho, J. S. Drewery, W. S. Hong, T. Jing, S. N. Kaplan, A. Mireshghi, V. Perez-Mendez, D. Wildermuth

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Using the high light absorption properties of amorphous silicon, we developed a new device configuration that can detect photons and store the induced charges for relatively long time. This device, coupled to a scintillator such as CsI(Tl) in an array form, could be used as a scintillation camera, or for long-term photo-detection such as radionuclide labeled chromatography. The detector has a simple sandwich structure consisting of a scintillator followed by a top metal layer, p-i-n layers of hydrogenated amorphous silicon (a-Si:H), a second metal layer, a thin insulating layer and a bottom metal layer. The electron-hole pairs generated in the i-layer by the interaction with the incident light will be separated by the imposed electric field and be stored in the central metal-insulator interface. Readout will be done by switching the external bias to ground after the storage time, which depends on the needs for the specific application. Prototype devices were fabricated and tested. The performances of the devices were analyzed in connection with the storage time and the background signal produced by the thermally generated charges.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)155899193X, 9781558991934
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA


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