TY - JOUR
T1 - New program inhibition scheme for high boosting efficiency in three-dimensional NAND array
AU - Seo, Joo Yun
AU - Kim, Yoon
AU - Park, Byung Gook
PY - 2014/7
Y1 - 2014/7
N2 - In this work, program inhibition in a three-dimensional (3D) NAND array has been studied by technology computer-aided design (TCAD) simulation. Results indicate a variation in boosting efficiency among unselected channels with respect to their bias conditions. This variation can cause severe program disturbance in a NAND array. To reduce this potential variation, a new method that guarantees a reliable program inhibition has been designed. With this new scheme, the unwanted threshold voltage (VTH) shift of unselected cells induced by program disturbance can be notably reduced.
AB - In this work, program inhibition in a three-dimensional (3D) NAND array has been studied by technology computer-aided design (TCAD) simulation. Results indicate a variation in boosting efficiency among unselected channels with respect to their bias conditions. This variation can cause severe program disturbance in a NAND array. To reduce this potential variation, a new method that guarantees a reliable program inhibition has been designed. With this new scheme, the unwanted threshold voltage (VTH) shift of unselected cells induced by program disturbance can be notably reduced.
UR - http://www.scopus.com/inward/record.url?scp=84903650373&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.070304
DO - 10.7567/JJAP.53.070304
M3 - Article
AN - SCOPUS:84903650373
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 7
M1 - 070304
ER -