New read schemes using boosted channel potential of adjacent bit-line strings in nand flash memory

Sung Min Joe, Min Kyu Jeong, Myounggon Kang, Kyoung Rok Han, Sung Kye Park, Jong Ho Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

New schemes of read operation using boosted channel potential of adjacent bit-line (BL) strings are proposed for improving on-state current of a cell string in nand Flash memory. The channel resistance of pass cells in a cell string under read operation is decreased by the electric field due to the boosted channel potential of adjacent BL strings, which increases on-state current of the cell string. Proposed schemes give much smaller read disturbance compared with conventional ones because the boosted channel potential of unselected BL strings prevents soft programming in cells of the unselected BL strings. It was also shown that new read operation of #2 scheme leads to suppress the background pattern dependence by ∼58%, as compared with the conventional read operation scheme.

Original languageEnglish
Article number6231643
Pages (from-to)1198-1200
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number8
DOIs
StatePublished - 2012

Keywords

  • Background pattern dependence (BPD)
  • interference
  • nand Flash memory
  • on-cell string current
  • read disturbance
  • self-boosting

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