Non-Markovian gain of strained-layer wurtzite GaN quantum-well lasers with many-body effects

Doyeol Ahn, S. H. Park, T. I. Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A theoretical model for the optical gain of strained-layer wurtzite GaN quantum-well (QW) lasers is developed taking into account valence-band mixing, many-body effects and non-Markovian relaxation. The valence-band structure is calculated from a 6 × 6 multiband effective mass Hamiltonian for the wurtzite structure taking into account built-in strain due to lattice mismatch. The theoretical foundation for the optical processes is based on the time-convolutionless reduced-density operator formalism given in previous papers for an arbitrary driven system coupled to a stochastic reservoir. Many-body effects are taken into account within the time-dependent Hartree-Fock approximation and the optical gain with Coulomb (or excitonic) enhancement is derived by integrating the equation of motion for the interband polarization. It is predicted that the Coulomb enhancement of gain is pronounced with increasing magnitude of compressive strain in the QW.

Original languageEnglish
Pages (from-to)520-525
Number of pages6
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume4
Issue number3
DOIs
StatePublished - May 1998

Keywords

  • GaN
  • Gain
  • Non-Markovian
  • Quantum-well laser
  • Wurtzite

Fingerprint

Dive into the research topics of 'Non-Markovian gain of strained-layer wurtzite GaN quantum-well lasers with many-body effects'. Together they form a unique fingerprint.

Cite this