Non-polar wurtzite (1120) GaN/AlN quantum dots for highly efficient opto-electronic devices

Seoung Hwan Park, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In III-nitride quantum dots (QDs), optical transition rate is very low because of the large built-in electrostatic field caused by the spontaneous polarization (SP) and piezoelectric (PZ) effects. In this work, we study the screening potential which is a solution of the self-consistent Hartree equation taking into account the built-in electrostatic field and its effect on light emission characteristics of non-polar wurtzite (WZ) (11¯20) GaN/AlN QD. It is found that the light emission intensity of the non-polar (11¯20) GaN/AlN QD structure is expected to be about four times larger than that of the c-plane (0001) GaN/AlN QD structure because the y-polarized matrix elements in the non-polar QD are larger than that in the c-plane QD. These predictions indicate that non-polar GaN/AlN QD structure have strong potential for highly efficient opto-electronic devices.

Original languageEnglish
Article number1256
Pages (from-to)1-10
Number of pages10
JournalElectronics (Switzerland)
Issue number8
StatePublished - Aug 2020


  • AlN
  • GaN
  • Light emission
  • Non-polar
  • Quantum dot


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