Non-volatile ferroelectric memory transistors using PVDF and P(VDF-TrFE) thin films

In this work, metal–ferroelectric–semiconductor field effect transistors (MFSFETs) have been fabricated for the first time using poly(vinylidene fluoride) (PVDF) and polyvinylidene fluoride trifluoroethylene [P(VDF-TrFE)] thin films as ferroelectric layers. PVDF and P(VDF-TrFE) thin films were fabricated by a sol-gel method on Si(100) wafers. The drain current–gate voltage (ID–VG) characteristics of both MFSFETs fabricated with PVDF and P(VDF-TrFE) thin films exhibited very good ferroelectric hysteretic curves with a counterclockwise loop that is the same as those of other ferroelectric materials. It also demonstrates the realization of a one-transistor type (1T-type) ferroelectric memory without a buffer layer using thin organic material. The absence of a buffer layer presents many advantages such as the elimination of the depolarization field, leakage current influence of the thin buffer layer, reduction of the process steps, low operational voltage, and low power consumption. MFSFETs using PVDF and P(VDF-TrFE) thin films as ferroelectric layers have promising potential for use in low-voltage and flexible 1T-type ferroelectric random access memory (FeRAM) using organic material.